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ATP613
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=10mA, VGS=0V
VDS= 400 V, VGS=0V
VGS=±30V, VDS=0V
500
100
±100
V
μ A
nA
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
VDS=10V, ID=1mA
VDS=10V, ID= 2.75 A
3
1.5
2.9
5
V
S
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID= 2.75 A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=5.5A
IS=5.5A, VGS=0V
See Fig.3
IS=5.5A, VGS=0V, di/dt=100A/ μ s
1.55
350
68
15
14.2
46
37.6
20.4
13.8
3.2
7.6
1.1
60
120
2.0
1.5
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
≥ 50 Ω
RG
G
D
L
10V
0V
VIN
VIN
VDD=200V
ID=2.75A
RL=71 Ω
10V
0V
50 Ω
S
ATP613
VDD
PW ≤ 10 μ s
D.C. ≤ 1%
G
D
VOUT
S
ATP613
Fig.3 Reverse Recovery Time Test Circuit
P.G
50 Ω
ATP613
G
D
500 μ H
S
VDD=50V
Driver MOSFET
Ordering Information
Device
ATP613-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1903-2/7
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